A unified current-voltage model for long-channel nMOSFETs

Abstract

A unified current-voltage model is developed for long-channel nMOSFETs. This model is based on the unified charge control model (UCCM), which agrees very well with quantum-mechanical calculation results assuming two-dimensional electron gas, as well as with experimental capacitance-voltage measurements for the inversion layer formed at the Si-SiO/sub 2/ interface on