A High-Performance MEMS Capacitive Strain Sensing System

Abstract

This paper describes a high-performance strain sensing microsystem. The system consists of four parallel differential MEMS capacitive strain sensors with a nominal capacitance value of 440 fF, converting an input strain to a capacitance change with a sensitivity of 265 aF per microstrain (muepsiv), and low-noise integrated sensing electronics, which employ a differential continuous-time synchronous detection architecture converting the capacitive signal to an output voltage for further signal processing. Based on system noise characterization, the prototype design shows a capability of measuring a strain resolution of 0.9 nepsiv/radicHz, while demonstrating a maximum dc input stain range of 1000 muepsiv. The overall system consumes 1.5 mA dc current from a 3-V supply