Transferred substrate Schottky-collector heterojunction bipolar transistors: first results and scaling laws for high f/sub max/

Abstract

Unlike normal heterojunction bipolar transistors (HBT's), transferred substrate Schottky-collector HBT's (SCHBT's) exhibit substantial increases in f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</sub> as the emitter and collector stripes are scaled to deep submicron dimensions. First generation InAlAs/InGaAs SCHBT's with aligned 1-μm emitter and collector stripes have been fabricated.