Concepedia

Improved compositional uniformity of InGaAsP grown by low pressure metalorganic vapor phase epitaxy using tertiary butyl phosphine as the phosphorus source

J. L. Zilko, P.S. Davisson, L. C. Luther, K. D. C. Trapp

Journal of Crystal Growth · 1992 · 26 citations · 3 references

DOI

Concepts

References

3

Band gap versus composition and demonstration of Vegard’s law for In1−<i>x</i>Ga<i>x</i>As<i>y</i>P1−<i>y</i> lattice matched to InP

R. E. Nahory, M. A. Pollack, W. D. Johnston et al. · Applied Physics Letters · 1978 · 415 citations

, , +16

A new versatile, large size MOVPE reactor

P. Frijlink · Journal of Crystal Growth · 1988 · 108 citations

, , +4

Properties of GaInAs(P)/InP multilayers and superlattices grown by MOVPE at atmospheric pressure

J. P. André, J. N. Patillon, C. Schiller et al. · Journal of Crystal Growth · 1991 · 11 citations

, , +12