Electronics Letters · 1993 · 13 citations · 0 references
EngineeringElectrical EngineeringMaterials EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingHigh-frequency Semiconductor DevicesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsSilicon MaterialsBreakdown VoltageDelta DopingDopant ImplantationHigh-voltage BreakdownMolecular Beam EpitaxySilicon Doping
The fabrication of an Sb delta-doped Si n-MESFET grown by molecular-beam epitaxy (MBE) and a low-energy Sb ion source is reported. The FETs have gate lengths of 2μm and showed a transconductance as high as 28 mS/mm and a gate breakdown voltage of 3.7–4.8 V.