Journal of The Electrochemical Society · 1975 · 35 citations · 0 references
EngineeringMaterials EngineeringMaterials ScienceElectronic MaterialsNuclear PhysicsSemiconductor MaterialsDopingRadiation Damage In MaterialsSemiconductor Device MaterialsSilicon MaterialsNeutron Irradiation DamageNeutron Irradiation EffectsSemiconductor DopingSilicon AnnealingSilicon DopingSilicon Electrical PropertiesSilicon Impurities
Pure undoped Si is doped by neutron transmutation by using the reaction /sup 30/Si + n = /sup 31/Si + ..gamma.. = /sup 31/P + ..beta... The damage from this neutron bombardment is annealed, resulting in homogeneous doping of the Si. This method of doping results in smaller spreading and radial resistance than other methods. (WDM)