Modeling Advanced FET Technology in a Compact Model

Abstract

The need for meeting the expectations of continuing the enhancement of CMOS performance and density has inspired the introduction of new materials into the classical single-gate bulk MOSFET and the development of nonclassical multigate transistors at an accelerated rate. There is a strong need to understand and model the associated new physics and electrical behavior to ensure widespread very-large-scale-integration circuit applications of new technologies. This paper presents some of the efforts toward the modeling of new technologies for bulk MOSFETs and multigate transistors. A holistic model for mobility enhancement through process-induced stress and a dynamic behavior model for high- <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$k$</tex> transistors have been developed to capture some of the new effects and new materials in the bulk MOSFET. A new analytical model is also presented for the fundamentally new device structure—FinFET.