SiGeC/Si superlattice microcoolers

TLDR

Monolithically integrated active cooling offers attractive thermal management for microelectronics, and SiGeC, lattice‑matched to Si, is a promising material for such integrated coolers. SiGeC/Si superlattice microcoolers were grown on Si by molecular beam epitaxy, their thermal conductivity measured with the 3ω method, and devices as small as 40 × 40 µm² were fabricated and characterized. The microcoolers achieved spot cooling of up to 2.8 K at 25 °C and 6.9 K at 100 °C, yielding peak power densities around 1000 W/cm².

Abstract

Monolithically integrated active cooling is an attractive way for thermal management and temperature stabilization of microelectronic and optoelectronic devices. SiGeC can be lattice matched to Si and is a promising material for integrated coolers. SiGeC/Si superlattice structures were grown on Si substrates by molecular beam epitaxy. Thermal conductivity was measured by the 3ω method. SiGeC/Si superlattice microcoolers with dimensions as small as 40×40 μm2 were fabricated and characterized. Cooling by as much as 2.8 and 6.9 K was measured at 25 °C and 100 °C, respectively, corresponding to maximum spot cooling power densities on the order of 1000 W/cm2.