Laser‐Interference Lithography Tailored for Highly Symmetrically Arranged ZnO Nanowire Arrays

Abstract

Lining up: Highly symmetrically arranged ZnO nanowire arrays (see image) are produced by laser-interference lithography and a chemical vapor transport process. The nanowires show a narrow diameter distribution and uniform spacing. A liquid-phase-assisted vapor–solid mechanism is proposed for one-to-one synthesized ZnO-nanowire growth. Scanning cathodoluminescence and photoluminescence microscopy are used to characterize the optical properties. Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2296/2007/z600307_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.