IEEE Photonics Technology Letters · 2012 · 22 citations · 9 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLight-emitting DiodesLuminescent MaterialsNanostructured Electronic MaterialsOptical Properties Of SemiconductorsSemiconductor NanomaterialsSemiconductor PhysicsElectroluminescenceLight-emitting DevicesLight-emitting MaterialsLuminescent NanomaterialsPhotoluminescenceQuantum RingsSemiconductor Light-emitting MaterialsSemiconductor Quantum Dots
The influence of Sb/background As flux ratios on GaSb nano-structures is investigated in this letter. With decreasing Sb/background As flux ratios under high Sb irradiation during the post soaking procedure, ring formation, photoluminescence (PL) intensity enhancement, and PL peak red shift are observed. With further reduced Sb flux and Sb/background As ratios, the observed more intense PL intensities of the quantum-ring (QR) samples compared with quantum dots suggest that more electron-hole wave function overlapping is obtained. The observation of room-temperature electro-luminescence of a QR PIN diode has revealed the potential of the nano-structure in light-emitting device application.
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Radiative recombination in type-II GaSb/GaAs quantum dots
Fariba Hatami, N. N. Ledentsov, Marius Grundmann et al. · Applied Physics Letters · 1995 · 324 citations
450 meV hole localization in GaSb/GaAs quantum dots
M. Geller, C. M. A. Kapteyn, L. Müller‐Kirsch et al. · Applied Physics Letters · 2003 · 158 citations
Natural Sciences, Electrical Engineering, Materials Science +17