C. M. A. Kapteyn - Concepedia

Author

C. M. A. Kapteyn

Also Known As

C Kapteyn, C M A Kapteyn, C. Kapteyn, C. M. A. Kapteyn, C.M.A Kapteyn, C.M.A. Kapteyn, Christian Kapteyn, Kapteyn, C. M., Kapteyn, Christian

Publications

821

Citations

H-Index

Concepts

All Affiliations

Technische Universität Berlin Physico-Technical Institute

About

C. M. A. Kapteyn is an author at Technische Universität Berlin specializing in applied physics, physics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	752
2	Applied Physics	11	11	752
3	Physics	11	11	752
4	Electrical Engineering	4	4	324
5	Materials Science	1	1	50

C. M. A. Kapteyn

Publications

752

Citations

H-Index

Page 1

	Year	Citations
450 meV hole localization in GaSb/GaAs quantum dots M. Geller, C. M. A. Kapteyn, L. Müller‐Kirsch, Applied Physics Letters Categoryquantum ElectronicsEngineeringSemiconductor MaterialsOptoelectronic DevicesElectronic Properties	2003	158
Electron escape from InAs quantum dots C. M. A. Kapteyn, F. Heinrichsdorff, O. Stier, Physical review. B, Condensed matter Quantum ScienceElectron EscapeEngineeringVertical Electric FieldPhysics	1999	152
Hole and electron emission from InAs quantum dots C. M. A. Kapteyn, M. Lion, R. Heitz, Applied Physics Letters Electrical EngineeringEngineeringPhysicsNanoelectronicsQuantum Device	2000	111
Electron localization by self-assembled GaSb/GaAs quantum dots M. Hayne, Jochen Maes, S. Bersier, Applied Physics Letters SemiconductorsHigh Laser PowerPhotoluminescenceElectron LocalizationLow Laser Power	2003	68
Tunneling emission from self-organized In(Ga)As∕GaAs quantum dots observed via time-resolved capacitance measurements M. Geller, E. Stock, C. M. A. Kapteyn, Physical Review B Categoryquantum ElectronicsEngineeringSemiconductor NanostructuresSemiconductorsElectron Physic	2006	55
Radiation hardness of InGaAs/GaAs quantum dots F. Guffarth, R. Heitz, M. Geller, Applied Physics Letters Categoryquantum ElectronicsPoint DefectsEngineeringOptoelectronic DevicesExciton Ground State	2003	52
Many-particle effects in Ge quantum dots investigated by time-resolved capacitance spectroscopy C. M. A. Kapteyn, M. Lion, R. Heitz, Applied Physics Letters Categoryquantum ElectronicsEngineeringTime-resolved Capacitance SpectroscopyMany-particle EffectsSemiconductor Nanostructures	2000	50
Capacitance–voltage characteristics of InAs/GaAs quantum dots embedded in a <i>pn</i> structure R. Wetzler, A. Wacker, Eckehard Schöll, Applied Physics Letters EngineeringOptoelectronic DevicesPn JunctionSemiconductor NanostructuresSemiconductors	2000	41
Emission of electrons from the ground and first excited states of self-organized InAs/GaAs quantum dot structures P. N. Brunkov, A. R. Kovsh, V. M. Ustinov, Journal of Electronic Materials Quantum ScienceEngineeringPhysicsQuantum DeviceExcited States	1999	36
Hole storage in GaSb/GaAs quantum dots for memory devices M. Geller, C. M. A. Kapteyn, L. Müller‐Kirsch, physica status solidi (b) EngineeringSemiconductor MaterialsOptoelectronic DevicesHole StorageSemiconductor Nanostructures	2003	15

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