Chemical‐state‐resolved in‐depth profiles of gate‐stack structures on Si studied by angular‐dependent photoemission spectroscopy

Abstract

Abstract We have investigated chemical‐state‐resolved in‐depth profiles of SiO 2 /SiN stack films using angular‐dependent photoemission spectroscopy and maximum‐entropy method (MEM). MEM enables to reproduce the gate‐stack structure from angular‐dependence of core‐level spectra, and it is utilized to determine atomic concentration of the interfacial layer. In‐depth profile of the SiO 2 /SiN stack film reveals that the SiO 2 layer is distributed in the surface region and that the SiN layer is partly oxidized, which is well related to nitrogen bonding states analyzed by angular‐dependence of N 1s core‐level spectra. Copyright © 2008 John Wiley & Sons, Ltd.