Nanoscale Research Letters · 2014 · 31 citations · 19 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor MaterialsThin FilmsSemiconductor Crystal GrowthSemiconductor Device MaterialsSemiconductor PhysicsSemiconductor Thin FilmsThin Film Optical PropertiesThin-film MaterialsAir VoidsCarrier Transport MechanismsDefect Energy LevelsFilm Growth MechanismsGrowth MechanismsPulsed Laser DepositionPump-probe SpectroscopyVoids
In this work, CuIn1 - x Ga x Se2 (CIGS) thin films were prepared by nanosecond (ns)- and femtosecond (fs)-pulsed laser deposition (PLD) processes. Different film growth mechanisms were discussed in perspective of the laser-produced plasmas and crystal structures. The fs-PLD has successfully improved the inherent flaws, Cu2 - x Se, and air voids ubiquitously observed in ns-PLD-derived CIGS thin films. Moreover, the prominent antireflection and excellent crystalline structures were obtained in the fs-PLD-derived CIGS thin films. The absorption spectra suggest the divergence in energy levels of radiative defects brought by the inhomogeneous distribution of elements in the fs-PLD CIGS, which has also been supported by comparing photoluminescence (PL) spectra of ns- and fs-PLD CIGS thin films at 15 K. Finally, the superior carrier transport properties in fs-PLD CIGS were confirmed by fs pump-probe spectroscopy and four-probe measurements. The present results indicate a promising way for preparing high-quality CIGS thin films via fs-PLD.
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Hot-Electron Transfer from Semiconductor Nanocrystals
William A. Tisdale, Kenrick J. Williams, Brooke A. Timp et al. · Science · 2010 · 868 citations
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