Electroluminescent porous silicon device with anexternal quantum efficiency greater than 0.1% under CW operation

Abstract

The authors report an all solid state, VLSI compatible, electroluminescent device based on porous silicon with an external quantum efficiency greater than 0.1% under CW operation. The emission, which is broadband and peaks at 600 nm, is detected above a low threshold current density and voltage of 0.01 Am-2 and 2.3 V, respectively.