Optical Phonons in Amorphous Silicon Oxides. II. Calculation of Phonon Spectra and Interpretation of the IR Transmission of SiO_<i>x</i>

Abstract

Abstract Basing on the theoretical investigations of Part I of this work a simple model for the calculation of the density of vibrational modes and of the IR response function of the geometrically and chemically disordered material SiO x (0 &lt; x ≦ 2) is developed. This model leads for the first time to a theoretical interpretation of LO—TO splittings and of chemical shifts of the minima of IR transmission spectra of thin SiO x films prepared by reactive sputtering.