IEEE Transactions on Nuclear Science · 2003 · 31 citations · 33 references
EngineeringElectrical EngineeringMaterials ScienceNuclear PhysicsRadiation PhysicsSemiconductor DevicesCharge-coupled DevicesDefects In Electronic MaterialsProton TherapyRadiation Damage In MaterialsRadiation HardeningRadiation ResistanceAnnealingAnnealing EffectsCharge-coupled Device DetectorsIrradiation DamageLattice DefectsRadiation Damage EffectsRadiation Damage In DetectorsRadiation Effects
Dark current and charge transfer inefficiency (CTI) data are presented for three charge-coupled devices (CCD) device types after 9.5- and 60-MeV proton irradiation. Comparison of the damage at the two energies allows a test of the validity of NIEL scaling. The ratio of the damage at 9.5 MeV to that at 60 MeV was found to be 35% higher for the CTI than for the average bulk dark current, for the devices tested. Both the CTI and the dark current showed significant annealing at 150/spl deg/C, and this has implications for the lattice defects involved. Cobalt-60 data are also discussed.
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Scientific Charge-Coupled Devices
James R. Janesick, Tom Elliott, S. A. Collins et al. · Optical Engineering · 1987 · 862 citations
Engineering, Physics, Photonics +16
The Physics of Semiconductor Devices
Andrew Grant · Physics Bulletin · 1978 · 795 citations
Proton nonionizing energy loss (NIEL) for device applications
Insoo Jun, M.A. Xapsos, Scott R. Messenger et al. · IEEE Transactions on Nuclear Science · 2003 · 186 citations