Modern Physics Letters B · 2001 · 30 citations · 18 references
SemiconductorsQuantum ScienceParabolic Quantum DotSemiconductor TechnologyEngineeringQuantum ComputingPhysicsCategoryquantum ElectronicsElectronic StatesQuantum DeviceCavity QedApplied PhysicsQuantum DotsQuantum MaterialsCondensed Matter PhysicsQuantum DevicesParabolic ConfinementSemiconductor Nanostructures
Using a variational procedure, we have studied the electric field effect on the electronic states in a spherical GaAs – Ga 1-x Al x As quantum dot with parabolic confinement in the case of both finite and infinite barrier heights. For single-particle states of electrons and heavy holes a relative weak Stark shift at weak fields and a transition to a stronger shift at higher fields is found. Compared with a spherical quantum dot with a rectangular confinement potential, the parabolic quantum dot presents a greater restriction to the carriers. As a result, the confinement energy is larger, while the electric field effects on the energy levels are weaker. We conclude that a spherical quantum dot with a parabolic confinement may be significant for practical application.
18
The single-electron transistor
M. A. Kastner · Reviews of Modern Physics · 1992 · 1K citations
Electrical Engineering, Engineering, Tunneling Microscopy +11
Variational calculations on a quantum well in an electric field
G. Bastard, E. E. Méndez, L.L. Chang et al. · Physical review. B, Condensed matter · 1983 · 782 citations
Nonlocal dynamic response and level crossings in quantum-dot structures
T. Demel, D. Heitmann, P. Grambow et al. · Physical Review Letters · 1990 · 422 citations
Coupling of quantum dots on GaAs
A. Lorke, J. P. Kotthaus, K. Ploog · Physical Review Letters · 1990 · 306 citations