Practical OEICs based on the monolithic integration of GaAs-InGaP LEDs with commercial GaAs VLSI electronics

Abstract

Recent advances in the epitaxy-on-electronics (EoE) integration process, which combines commercial GaAs VLSI electronics with conventional epitaxial growth and fabrication to produce complex, monolithic optoelectronic integrated circuits (OEICs), have resulted in improved integrated light-emitting diodes (LEDs), eliminated any impact on the preexisting electronics, and increased the robustness of the integration process. An EoE-integrated OEIC combining a photodetector, electronics, and LED is presented which demonstrates the capability of this technology to now satisfy practical optoelectronic systems requirements.