2002 · 11 citations · 12 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave MeasurementsMicrowave Noise AnalysisMicrowave OscillatorsNoise In Electronic DevicesNoise In Semiconductor DevicesDiode-based OscillatorsHigh-frequency ElectronicsNoise In Tunnel DiodesOscillator DevicesOscillator Noise AnalysisRadio-frequency DevicesTunnel Diode CircuitsTunnel Diodes
A 16-channel tunnel diode grid oscillator has been fabricated. The grid oscillates at 1.86 GHz with an effective radiated power (ERP) of 1.3 mW. Frequency components were observed at multiples of one-third of the main frequency, but at power levels at least 16 dB lower. The average single-sideband (SSB) noise level was measured to be -76 dBc/Hz at an offset of 100 kHz from the carrier.
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Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown, J. R. Söderström, C. D. Parker et al. · Applied Physics Letters · 1991 · 796 citations
Engineering, Electrical Engineering, Electronic Materials +16
A 100-MESFET planar grid oscillator
Zoya Popović, Robert M. Weikle, Michelle Kim et al. · IEEE Transactions on Microwave Theory and Techniques · 1991 · 194 citations
Periodicity and Chaos in Coupled Nonlinear Oscillators
J. P. Gollub, T. O. Brunner, B.G. Danly · Science · 1978 · 70 citations