IEEE Transactions on Instrumentation and Measurement · 1995 · 21 citations · 5 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesThin FilmsDevice CharacterizationNoiseNoise In Analog CircuitsNoise In Electronic DevicesNoise In Semiconductor DevicesNoise MeasurementDevice Noise CharacterizationNoise CharacterizationNoise In Field-effect TransistorsNoise Parameter ExtractionNoise ParametersOn-wafer MeasurementOn-wafer Measurement TechniquesReflection Coefficients
Using a thin film technology, we have designed and fabricated a new passive device for noise parameter measurement test instrumentation verification. The main feature specifying this device is the same order of magnitude for input-output reflection coefficients and for noise parameters, as for low-noise field effect transistors. This new device is useful as a verification artifact, suited for on-wafer measurements due to its small size and wide operation bandwidth.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Using cold FET to check accuracy of microwave noise parameter test set
L. Escotte, R. Plana, J. Rayssac et al. · Electronics Letters · 1991 · 26 citations
Accuracy improvements in two-port noise parameter extraction method
A. Boudiaf, Michael Laporte, J. Dangla et al. · 2003 · 23 citations