An examination of the 'tunnel junctions' in triple junction a-Si:H based solar cells: modeling and effects on performance

Abstract

The first-principles computer model AMPS is used to model multijunction solar cell performance. The specific cell modeled uses two a-Si:H absorber layers and an a-SiGe:H absorber layer with all a-SiC:H p/sup +/ layers and all a-Si:H n/sup +/ layers, the modeling shows the contacts in these cells depend critically on recombination in x-layers which may be independently present or, in a well-designed cell, purposefully present. These x-layers must be supplied with carriers. This process may be optimized by appropriate bandgap grading. The modeling shows that multijunction contact layers-unless fully optimized-are not simply resistor-like or diode-like in their behavior.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>