J. K. Arch

Range of validity of the surface-photovoltage diffusion length measurement: A computer simulation

P. J. McElheny, J. K. Arch, Henry Lin et al. · Journal of Applied Physics · 1988 · 141 citations

Engineering, Diffusion Length, Photovoltaic Devices +25

Computer analysis of the role of <i>p</i>-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon <i>p</i>-<i>i</i>-<i>n</i> solar cells

J. K. Arch, F.A. Rubinelli, Jingya Hou et al. · Journal of Applied Physics · 1991 · 103 citations

Engineering, Computer Analysis, Photovoltaic Devices +22

Effect of contact barrier heights on <i>a</i>-Si:H <i>p</i>-<i>i</i>-<i>n</i> detector and solar-cell performance

F.A. Rubinelli, J. K. Arch, Stephen J. Fonash · Journal of Applied Physics · 1992 · 45 citations

Contact Barrier Heights, Semiconductor Technology, Electrical Engineering +14

Silicon solar cell of 16.8 μm thickness and 14.7% efficiency

J.H. Werner, Sabine Kolodinski, Uwe Rau et al. · Applied Physics Letters · 1993 · 41 citations

Engineering, Energy Efficiency, Photovoltaic Devices +19

Origins of reverse bias leakage currents in hydrogenated amorphous silicon <i>p</i>-<i>i</i>-<i>n</i> detector structures

J. K. Arch, Stephen J. Fonash · Applied Physics Letters · 1992 · 37 citations

Reverse Leakage Currents, Semiconductor Technology, Electrical Engineering +13