An improved method for ultra fast recovery diode testing

Abstract

Semiconductor manufacturers are expending a great deal of effort in designing ultra fast recovery diodes to complement high voltage, high current switching devices, such as IGBTs, that are available today. Circuit designers trying to use these diodes and semiconductor designers trying to evaluate new manufacturing processes are being misled by test results measured on test fixtures that have not changed for many years. These test fixtures were created when diode recovery parameters were many times higher than what is possible today. An evaluation of the testing of fast recovery epitaxial diodes (FRED) is carried out and a new test method is described.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>