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Highly reproducible ideal SiC Schottky rectifiers: effects of surface preparation and thermal annealing on the Ni/6H-SiC barrier height

Materials EngineeringMaterials ScienceElectrical EngineeringSurface PreparationEngineeringNi/6h-sic Barrier HeightPower DeviceNanoelectronicsApplied PhysicsPower Semiconductor DeviceSemiconductor Device FabricationMicroelectronicsThermal AnnealingCarbide