A 4.5 kV HBM, 300 V CDM, 1.2 kV HMM ESD protected DC-to-16.1 GHz wideband LNA in 90 nm CMOS

Abstract

A DC-to-16.1 GHz wideband LNA in 90 nm digital CMOS is protected up to 4.5 kV HBM, equivalent 300 V CDM, and 1 kV HMM ESD stress by adding an area-efficient asymmetric T-diode with built-in local ESD protection in front of the RF input. Additional turn-off circuitry prevents any parasitic ESD path to be triggered in the core circuit.