EngineeringComputer EngineeringMemoryRadiation DosimetryRadiation MeasurementDevice ReliabilityEmbedded Memory BlocksHigh-dose Radiation EffectsMemory DevicesRadiation HardeningMagnetoresistive Random-access MemoryRadiation EffectsRadiation Effects On ReliabilityRadiation-hardened Memory DevicesRandom Access Memory (Ram)Static Random-access Memory
We report on SEL and TID tests of a magnetoresistive random access memory (MRAM). Single event latch-up was observed with a static configuration. Insitu irradiations were used to characterize the response of the total accumulated dose failures.
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Non-volatile memory technologies for beyond 2010
YunSeung Shin · 2005 · 74 citations