Improved model for single-event burnout mechanism

Abstract

We describe an improved model for single-event burnout (SEB) mechanism. The model includes the direct tunneling of carriers at the interface of epitaxial layer and substrate. Compared with our previous models, the new model is more successful in reproducing the voltage dependence of the collected charge when incident heavy ions strike the emitter area. The model clearly explains the reason why the emitter stripe region was more susceptible to SEBs.