Power Amplifier for 77-GHz Automotive Radar in 90-nm LP CMOS Technology

Abstract

This letter reports power amplifiers for 77-GHz automotive radar applications in a 90-nm LP (low power) 1P6M CMOS technology. The three-stage single-ended PA has a 12.4 dB gain and a +9.1-dBm saturated output power and the two-stage differential PA has a 11.3 dB gain and a +11.4-dBm output power at P <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">in</sub> = 1.9 dBm. This is the first letter to report CMOS PA characteristics over full automotive temperature range (-40°C to 125°C) at 77 GHz range.