J. Kirchgessner

A 0.18 μm SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications

J. Kirchgessner, Stephen J. Bigelow, F.K. Chai et al. · 2002 · 44 citations

Low-power Electronics, Photonics, Electrical Engineering +15

Bonding pad models for silicon VLSI technologies and their effects on the noise figure of RF NPNs

N. Camilleri, J. Kirchgessner, Júlio Costa et al. · 2002 · 29 citations

Engineering, Vlsi Design, Integrated Circuits +20

An advanced 0.4 mu m BiCMOS technology for high performance ASIC applications

J. Kirchgessner, J. Teplik, V. Ilderem et al. · 2002 · 26 citations

Engineering, Vlsi Design, Minimum Ecl Delay +17

Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications

J. John, F. Chai, David Morgan et al. · 2003 · 24 citations

Low-power Electronics, Bicmos Technology, Electrical Engineering +13

A multi-channel Rx for 76.5GHz automotive radar applications with 55dB IF channel-to-channel isolation

Saverio Trotta, Bernhard Dehlink, Ralf Reuter et al. · European Microwave Integrated Circuits Conference · 2009 · 21 citations

Radar, Radio Frequency, If Channel-to-channel Isolation +6