IEEE Microwave and Wireless Components Letters · 2009 · 24 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesCmos Circuit DesignComplementary Metal-oxide-semiconductor TechnologyHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsPower AmplifiersRadio-frequency Integrated CircuitsCarrier InjectionCmos Analog Integrated CircuitsGainHigh-gain AmplifiersHot Carrier InjectionHot-carrier DegradationPower Amplifier DesignPower Output
A 77 GHz 90 nm CMOS power amplifier (PA) demonstrates a gain of 17.4 dB and a saturated output power of 5.8 dBm at a low supply voltage of 0.7 V. To take care of hot-carrier injection degradation, the supply voltage is reduced from a standard voltage of 1.0 V. The saturated output power is increased to 9.4 dBm with a linear gain of 20.6 dB at 1.0 V operation. The amplifier consists of three-stage common-source nMOSFETs with gate widths of 40, 80, and 160 mum. To our best knowledge, the developed PA shows the highest gain ever achieved for W-band CMOS amplifier. The measured temperature characteristics suggest that a simple compensation technique is possible by gate bias control.
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TX and RX Front-Ends for 60GHz Band in 90nm Standard Bulk CMOS
Masahiro Tanomura, Yasuhiro Hamada, Shuya Kishimoto et al. · 2008 · 139 citations
60 and 77GHz Power Amplifiers in Standard 90nm CMOS
Toshihide Suzuki, Yoichi Kawano, Masaru Sato et al. · 2008 · 86 citations