25-W 915-nm Lasers With Window Structure Fabricated by Impurity-Free Vacancy Disordering (IFVD)

Concepts

EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser Material ProcessingLaser PhysicsLight-emitting DiodesSemiconductor Device MaterialsSemiconductor LasersHigh-power Laser DiodesHigh-power Semiconductor LasersLasersSemiconductor Laser DiodesSemiconductor Laser FabricationSingle-mode LasersSingle-mode Semiconductor Lasers

Abstract

We have demonstrated high-performance broad-area single-emitter lasers with window structure fabricated by newly developed impurity-free vacancy disordering (IFVD) technique. A very high pulse output power of 25 W was obtained in 100-m wide lasers without facet degradation.

References

Stripe-geometry quantum well heterostructure Al<i>x</i>Ga1−<i>x</i>As-GaAs lasers defined by defect diffusion

D.G. Deppe, L. J. Guido, N. Holonyak et al. · Applied Physics Letters · 1986 · 191 citations

Engineering, Materials Engineering, Materials Science +16

Improvement of catastrophic optical damage (COD) level for high-power 0.98-μm GaInAs-GaInP laser

Jiyeon Lee, K.H. Park, Dae-Geun Jang et al. · IEEE Photonics Technology Letters · 1998 · 45 citations

Engineering, Electrical Engineering, Materials Science +17

High-power and highly reliable operation of Al-Free InGaAs-InGaAsP 0.98-μm lasers with a window structure fabricated by Si ion implantation

K. Hiramoto, M. Sagawa, T. Kikawa et al. · IEEE Journal of Selected Topics in Quantum Electronics · 1999 · 22 citations

Engineering, Electrical Engineering, Materials Science +17

Suppression of thermal atomic interdiffusion in C-doped InGaAs∕AlGaAs quantum well laser structures using TiO2 dielectric layers

Paulus Lobo Gareso, M. Buda, Lan Fu et al. · Applied Physics Letters · 2004 · 15 citations

Engineering, Materials Science, Physics +17