IEEE Photonics Technology Letters · 2004 · 12 citations · 3 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsQuantum Well DevicesQuantum WellsSemiconductor HeterostructuresSemiconductor LasersAntireflection CoatingsMaximum OutputMaximum Power OutputMolecular Beam EpitaxyQuantum Well Laser DiodesQuantum Well LasersQuantum Well StructuresSemiconductor Laser Diodes
A 1.5-W continuous-wave power output in a beam pattern of 3/spl deg/ is obtained from a new designed rhombus-like stripe strained quantum-well diode laser (/spl lambda/=980 nm) with a 150-μm-wide emission aperture grown by molecular beam epitaxy. The /spl eta//sub d/ is as high as 78%, and the maximum output power by the new stripe laser is 5.0 W for antireflection/high-reflection coated devices.
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High-brightness 735 nm tapered diode lasers
Bernd Sumpf, R. Hülsewede, G. Erbert et al. · Electronics Letters · 2002 · 24 citations
11.5 W pulsed operation of antiguided laser diode array
J. S. Major, D. Mehuys, David Welch · Electronics Letters · 1992 · 20 citations