R. Hülsewede

High-power 810-nm GaAsP-AlGaAs diode lasers with narrow beam divergence

J. Sebastian, G. Beister, F. Bugge et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2001 · 52 citations

Aluminium Nitride, Photonics, Electrical Engineering +13

Comparative performance studies of indium and gold-tin packaged diode laser bars

Dirk Lorenzen, M. Schröder, J. Meusel et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2006 · 34 citations

Engineering, Laser Applications, Laser Material +22

High-power highly reliable Al-free 940-nm diode lasers

G. Erbert, G. Beister, R. Hülsewede et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2001 · 34 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +11

High-power diode lasers with small vertical beamdivergence emitting at 808 nm

H. Wenzel, F. Bugge, G. Erbert et al. · Electronics Letters · 2001 · 30 citations

High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm

T. K. Sharma, M. Zorn, F. Bugge et al. · IEEE Photonics Technology Letters · 2002 · 26 citations

Wide-bandgap Semiconductor, Engineering, Laser Science +19