Device and circuit modeling using novel 3-state quantum dot gate FETs

Abstract

This paper presents simulation of three-state behavior recently reported in quantum dot gate field-effect transistor (FET) structures. The model self-consistently solves Schrodinger and Poisson equations with built-in transfer of carriers from the inversion channel to two layers of cladded SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</sub> -Si quantum dots (QDs) forming the gate, predicting the "intermediate state" in the transfer I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">d</sub> -V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> characteristic. Circuit model and simulations for a 3-bit ADC are also presented.