2002 · 13 citations · 9 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Integrated CircuitsPower AmplifiersRadio TelescopesRadio-frequency Integrated CircuitsGaas Microwave Integrated CircuitsLocal OscillatorsMillimeter-wave Integrated CircuitsMonolithic ArchitecturePower Amplifier DesignPower OutputRadio Frequency Power AmplifiersWideband Amplifiers
A number of monolithic W-band power amplifiers (PAs) have been developed for local oscillators of the Far Infrared and Submillimeter Telescope (FIRST). These PA chips include three driver and three power amplifiers covering most of the W-band, i.e., the frequency ranges of 72-81, 90-101, and 100-113 GHz. Each driver amplifier and power amplifier provides at least 20 and 22 dBm (160 mW), respectively in the frequency range it covers. The 100-113 GHz power amplifier has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic chips are fabricated using 0.1-/spl mu/m AlGaAs-InGaAs-GaAs pseudomorphic T-gate power HEMTs on a 2-mil GaAs substrate.
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Full band waveguide-to-microstrip probe transitions
Yoke-Choy Leong, S. Weinreb · 2003 · 220 citations
A 95-GHz InP HEMT MMIC amplifier with 427-mW power output
Y.C. Chen, D. L. Ingram, R. Lai et al. · IEEE Microwave and Guided Wave Letters · 1998 · 63 citations
A 94-GHz 0.35-W power amplifier module
Pin-Pin Huang, T. C. Huang, Huei Wang et al. · IEEE Transactions on Microwave Theory and Techniques · 1997 · 35 citations