2008 · 10 citations · 10 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsNanotechnologySemiconductor DevicesCarbon NanomaterialsCarbon NanotubesDevice ModelingNanoelectronicsNanotubesBack-gated Field-effect TransistorsCarbon Nanotube Electrical ConductivityCarbon Nanotube NetworksElectrical Conductivity Of NanotubesLeakage Current ReductionNanotube AlignmentNanotube NetworksSingle-walled Carbon Nanotubes
We present an automated electrical burning process to selectively eliminate conducting paths due to metallic and high-leakage ambipolar single-walled carbon nanotubes in aligned and randomly networked configurations of varying dimensions. Our algorithm is hysterisis immune and adjusts gate bias in between successive burn pulses to facilitate optimized electrical burning results. In back-gated devices, we show improvements in on/off ratio better than three orders of magnitude while achieving on-state current reduction of less than 25%. We also discuss important considerations that must be taken into account for obtaining good electrical burning results in top-gated devices.
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Hysteresis Caused by Water Molecules in Carbon Nanotube Field-Effect Transistors
Ali Javey, Ophir Vermesh, Qian Wang et al. · Nano Letters · 2003 · 973 citations
Random networks of carbon nanotubes as an electronic material
E. S. Snow, James P. Novak, P. M. Campbell et al. · Applied Physics Letters · 2003 · 736 citations
Natural Sciences, Materials Engineering, Materials Science +17