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Below 20 ps/gate operation with GaAs SAINT FETs at room temperature
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1982
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Semiconductor TechnologyRoom TemperatureElectrical EngineeringEngineeringPhysicsSaint FetsGaas Saint FetsElectronic EngineeringApplied PhysicsRoom-temperature Ring OscillationPs/gate OperationMicroelectronicsBulk GaasSemiconductor Device
Room-temperature ring oscillation at 19.6 ps/gate has been accomplished with SAINT FETs using bulk GaAs and implantation. These results have been obtained along with extrinsic resistance reduction and capacitance reduction by taking full advantage of the n+-gate spacing controllability.