Drive-Current Enhancement in Ge n-Channel MOSFET Using Laser Annealing for Source/Drain Activation

Abstract

A gate-first self-aligned Ge nMOSFET with a metal gate and CVD <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$hboxHfO_2$</tex> has been successfully fabricated using KrF laser annealing (LA) as dopant-activation annealing. By applying an aluminum laser reflector on TaN metal gate, source/drain (S/D) regions are selectively annealed without heating the gate stack. Small S/D resistance and good gate-stack integrity are achieved simultaneously. As a result, a larger drive current and a lower threshold voltage are achieved in Ge nMOSFET using LA activation than that using conventional rapid thermal annealing activation.