IEEE Transactions on Electron Devices · 1981 · 31 citations · 2 references
EngineeringElectrical EngineeringMicroelectronicsMicrowave EngineeringSemiconductor DevicesHigh-frequency Semiconductor DevicesIntegrated Circuit DesignIntegrated Circuit FabricationMicrowave Integrated CircuitsMicrowave Semiconductor DevicesRadio-frequency Integrated CircuitsConversion LossCoplanar WaveguidesGaas Microwave Integrated CircuitsIntegrated Circuit MixersMixer CircuitsMixersMonolithic Microwave Integrated CircuitsNoise Temperature
A novel GaAs monolithic integrated circuit mixer has been fabricated which is impedance matched to fundamental waveguide. It consists of a slot coupler, coplanar transmission line, surface-oriented Schottky-barrier diode, and RF bypass capacitor monolithically integrated on the GaAs surface. At 110 GHz, a monolithic mixer module mounted in the end of a waveguide horn has an uncooled double-sideband (DSB) mixer noise temperature of 339 K and conversion loss of 3.8 dB.
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