Study of proton radiation effects on analog IC designed for high energy physics in a BiCMOS-JFET radhard SOI technology

Abstract

We present experimental results from a fast charge amplifier and a wideband analog buffer processed in the DMILL BiCMOS-JFET radhard SOI technology and irradiated up to 4.5/spl times/10/sup 14/ protons/cm/sup 2/. In parallel, we have irradiated elementary transistors. These components were biased and electrical measurements were done 30 min after beam stop. By evaluating variations of main SPICE parameters, i.e., threshold voltage shift for CMOS and current gain variation for bipolar transistors, we have simulated the wideband analog buffer at different doses. These SPICE simulations are in good agreement with measured circuit degradations. The behavior of the charge amplifier is consistent with extraction of transconductance and pinch-off voltage shift of the PJFET.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>