EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCarrier TransportDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignTransistor BiasingCarrier InjectionCompact Device ModelingEquivalent Circuit AnalysisEquivalent Circuit ModelingField-effect Transistor SimulationMosfet ModelingPhysics-based Device ModelingSemiconductor Device Modeling
A quasi-two dimensional HEMT model which makes it possible to predict device pinch off at high drain bias is presented. It includes an analytical description of the carrier injection into the buffer/substrate regions of the device. The equivalent circuit, extracted from the S parameter simulation shows no spurious responses and exhibits the correct variation with applied gate and drain bias.