A high performance submicron twin tub V technology for custom VLSI applications

Abstract

A fifth-generation, high-performance twin-tub, two-level metal, submicrometer CMOS technology has been developed for 5-V custom VLSI applications. This technology utilizes fabrication techniques of high-pressure oxidation (HIPOX) lightly doped drain (LDD) for both n and p channels, titanium self-aligned silicide (SALICIDE), and plasma-enhanced low-temperature oxide for intermetal dielectrics. The authors review the front-end process and elaborate on techniques involved in titanium salicide formation, the two-level metal process, and the temperature sensitivity of device parameters. In addition, high-performance circuits developed with this technology are demonstrated.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>