Guided Formation of a Sub‐10 nm Silicide Dot Array on an Area Patterned by Electron‐Beam Lithography

Abstract

A method for forming sub-10 nm silicide dots is reported. Crystalline Pd2Si dots with a diameter of approximately 8 nm are formed on a pattern with a scale of a few tens of nanometers defined by electron-beam lithography (see figure, scale bar is 200 nm). Supporting information for this article is available on the WWW under http://www.wiley-vch.de/contents/jc_2089/2007/c1043_s.pdf or from the author. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.