A physical analysis of HV MOSFET capacitance behaviour

Abstract

This work reports on the physical effects that appear on the AC characteristics of the high voltage LDMOS transistors. A qualitative explanation for the variation of the charges inside the device is proposed. TCAD simulations are used to sustain the presented theory. Finally, the specific peaks that appear on C/sub GS/ and C/sub GD/ characteristics function of the gate voltage are explained.