RF CMOS for microwave and MM-wave applications

Abstract

RF CMOS is gaining significant momentum as the technology of choice for implementing product designs in the 1-10GHz band. With scaling pushing f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T</sub> and f <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">MAX</sub> of FET's beyond 300GHz and integration of back-end-of-line (BEOL) conducive to low-loss passives, CMOS is poised to address application needs in the X, K and V bands