Low-cost high-efficient 10-Watt X-band high-power amplifier

Abstract

A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 ¿m pHEMT GaAs process (WIN Semiconductor PP25-01). The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of a high performance X-band T/R chipset.