2009 IEEE International Conference on Microwaves, Communications, Antennas and Electronics Systems · 2009 · 15 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Power ConversionHigh-frequency Semiconductor DevicesMicrowave AmplifiersMicrowave Semiconductor DevicesPower AmplifiersWide Band Gap SemiconductorsHigh-efficiency Power AmplifiersHigh-frequency Amplifier DesignHigh-gain AmplifiersPower Added EfficiencyPower Amplifier DesignPower EfficiencyPower OutputRadio Frequency Power Amplifiers
A high power X-band amplifier with an output power over 10 Watts and a Power Added Efficiency (PAE) in excess of 40 percent has been developed. The design was fabricated in a 0.25 ¿m pHEMT GaAs process (WIN Semiconductor PP25-01). The small die area in combination with a 6-inch wafer technology provides the possibility for low cost production of a high performance X-band T/R chipset.
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Breakdown effects on the performance and reliability of power MESFETs
M.S. Shirokov, R.E. Leoni, C.J. Wei et al. · 2002 · 14 citations