Publication | Closed Access
Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown
26
Citations
5
References
2003
Year
Unknown Venue
Materials EngineeringMaterials ScienceElectrical EngineeringReliabilityEngineeringReliability EngineeringThinnest OxideIntrinsic Limit80-Aa OxideApplied PhysicsTime-dependent Dielectric BreakdownElectronic PackagingDevice ReliabilityMicroelectronicsPower Electronic DevicesPhysic Of FailureElectrical Insulation
A technique is presented for determining the thinnest oxide which satisfies a given time-dependent dielectric breakdown reliability specification. The intrinsic limit for a 10-yr lifetime at 125 degrees C is estimated to be 80 A for 5.5-V operation and 50 A for 3.6-V operation. For the particular technology studies here, 150-AA oxide meets typical reliability specifications for 5.5-V operation, and 80-AA oxide is acceptable for 3.6-V operation (both at 125 degrees C).< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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