R. Moazzami - Concepedia

Author

R. Moazzami

University of California, Berkeley

Also Known As

R Moazzami, R. Moazzami, Reza Moazzami

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

University of California, Berkeley Motorola (United States)Texas Instruments (United States)Hodges University The University of Texas at Austin

About

R. Moazzami is an author at University of California, Berkeley specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	18	1.2K
2	Applied Physics	14	15	955
3	Electrical Engineering	14	16	1.1K
4	Computer Engineering	3	3	162
5	Education	1	1	10

R. Moazzami

Publications

1.2K

Citations

H-Index

Page 1

	Year	Citations
Electrical characteristics of ferroelectric PZT thin films for DRAM applications R. Moazzami, Chen Hu, W.H. Shepherd IEEE Transactions on Electron Devices Materials ScienceMultiferroicsElectrical EngineeringEngineeringFerroelectric Application	1992	272
Temperature acceleration of time-dependent dielectric breakdown R. Moazzami, J.C. Lee, Chenming Hu IEEE Transactions on Electron Devices DielectricsEngineeringPower Electronic SystemsHigh Voltage EngineeringThermodynamics	1989	144
Ferroelectric non-volatile memories for low-voltage, low-power applications Robert E. Jones, P.D. Maniar, R. Moazzami, Thin Solid Films Non-volatile MemoryElectrical EngineeringEngineeringNanoelectronicsApplied Physics	1995	135
A model for electrical conduction in metal-ferroelectric-metal thin-film capacitors C. Sudhama, A. C. Campbell, P.D. Maniar, Journal of Applied Physics SemiconductorsMaterials ScienceElectrical EngineeringElectronic DevicesElectrical Conduction	1994	134
Projecting gate oxide reliability and optimizing reliability screens R. Moazzami, Chenming Hu IEEE Transactions on Electron Devices ReliabilityElectrical EngineeringReliability EngineeringEngineeringReliability Screens	1990	112
A ferroelectric DRAM cell for high-density NVRAMs R. Moazzami, Chen Hu, W.H. Shepherd IEEE Electron Device Letters Polarization ReversalNon-volatile MemoryEngineeringEmerging Memory TechnologyFerroelectric Random-access Memory	1990	69
Ferroelectric thin film technology for semiconductor memory R. Moazzami Semiconductor Science and Technology Materials ScienceMaterials EngineeringElectrical EngineeringNon-volatile MemoryEngineering	1995	67
Circuit reliability simulator-oxide breakdown module Elyse Rosenbaum, P.M. Lee, R. Moazzami, ReliabilityElectrical EngineeringReliability EngineeringEngineeringHardware Reliability	2003	36
A high-quality stacked thermal/LPCVD gate oxide technology for ULSI R. Moazzami, Chenming Hu IEEE Electron Device Letters Electrical EngineeringEngineeringAdvanced Packaging (Semiconductors)Power DeviceNanoelectronics	1993	31
Projecting the minimum acceptable oxide thickness for time-dependent dielectric breakdown R. Moazzami, J. Lee, I.-C. Chen, Materials EngineeringMaterials ScienceElectrical EngineeringReliabilityEngineering	2003	26

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