A 1/3" format image sensor with refractory metal light shield for color video applications

D. L. Losee, John Cassidy, Mandeep R. Mehra, Edward T. Nelson, B.C. Burkey, G. Geisbuesch, G. A. Hawkins, Rajinder P. Khosla, James P. Lavine, W. C. McColgin,

2003 · 12 citations · 4 references

Concepts

Abstract

The authors report results obtained on a full-color interline transfer CCD (charged-coupled device) image sensor with pixel dimensions of 8.6 mu m(H)*6.8 mu m(V) using 1.2- mu m design rules and a two-phase, single-polysilicon-per-phase technology. In order to reduce image smear and to provide suitable topography for integral color filters, a refractory light shield with a flowed glass overlayer was incorporated. The basic sensor and pixel architecture is shown. Image smear as a percent of full well, measured with 10% vertical illumination at saturated intensity, is shown as a function of wavelength. Smear is lowest at short wavelengths but is at an acceptable level for applications with controlled illumination.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">&gt;</ETX>

References

4