A detailed study of p–n junction solar cells by means of collection efficiency

Surface recombination velocity of highly doped <i>n</i>-type silicon

Andrés Cuevas, Paul A. Basore, G. Giroult-Matlakowski et al. · Journal of Applied Physics · 1996 · 217 citations

Engineering, Materials Engineering, Materials Science +17

A reciprocity theorem for charge collection

C. Donolato · Applied Physics Letters · 1985 · 198 citations

Engineering, Electrical Engineering, Physics +14

Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters

Pietro P. Altermatt, Jürgen Schumacher, Andrés Cuevas et al. · Journal of Applied Physics · 2002 · 170 citations · Full text

Engineering, Materials Science, Physics +17

The physics and modeling of heavily doped emitters

Jesús A. del Alamo, R.M. Swanson · IEEE Transactions on Electron Devices · 1984 · 136 citations

Engineering, Electrical Engineering, Microelectronics +16

Generalized relationship between dark carrier distribution and photocarrier collection in solar cells

Martin A. Green · Journal of Applied Physics · 1997 · 49 citations

Engineering, Electrical Engineering, Materials Science +17